The first working Transistor


Physicist Julius Edgar Lilienfeld filed the first patent for a transistor in Canada in 1925, describing a device similar to a Field Effect Transistor or “FET”


From 1942 Herbert Mataré experimented with so-called Duodiodes while working on a detector for a Doppler RADAR system. The duodiodes built by him had two separate but very close metal contacts on the semiconductor substrate. He discovered effects that could not be explained by two independently operating diodes and thus formed the basic idea for the later point contact transistor.
In 1947, John Bardeen and Walter Brattain at AT&T’s Bell Labs in the United States observed that when electrical contacts were applied to a crystal of germanium, the output power was larger than the input. Solid State Physics Group leader William Shockley saw the potential in this, and over the next few months worked to greatly expand the knowledge of semiconductors. The term transistor was coined by John R. Pierce. According to physicist/historian Robert Arns, legal papers from the Bell Labs patent show that William Shockley and Gerald Pearson had built operational versions from Lilienfeld’s patents, yet they never referenced this work in any of their later research papers or historical articles.
The name transistor is a portmanteau of the term “transfer resistor”.
The first silicon transistor was produced by Texas Instruments in 1954. This was the work of Gordon Teal, an expert in growing crystals of high purity, who had previously worked at Bell Labs. The first MOS transistor actually built was by Kahng and Atalla at Bell Labs in 1960

ليست هناك تعليقات:

إرسال تعليق